pnp silicon planar medium power high current transistor issue 2 ? june 94 features * 4.5 amps continuous current * up to 20 amps peak current * very low saturation voltage * high gain * spice model available absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -15 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -6 v peak pulse current i cm -20 a continuous collector current i c -4.5 a practical power dissipation* p totp 1.58 w power dissipation at t amb =25c p tot 1.2 w operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -15 -28 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -12 -20 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-12v v cb =-12v, t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -50 -100 -220 -100 -150 -300 mv mv mv i c =-500ma, i b =-5ma* i c =-2a, i b =-50ma* i c =-5a, i b =-200ma* base-emitter saturation voltage v be(sat) -930 -1050 mv i c =-5a, i b =-200ma* base-emitter turn-on voltage v be(on) -830 -1000 mv ic=-5a, v ce =-1v* e-line to92 compatible ZTX968 3-333 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. static forward current transfer ratio h fe 300 300 200 150 450 450 300 240 50 1000 i c =-10ma, v ce =-1v* i c =-500ma, v ce =-1v* i c =-5a, v ce =-1v* i c =-10a, v ce =-1v* i c =-20a, v ce =-1v* transition frequency f t 80 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 161 pf v cb =-20v, f=1mhz switching times t on t off 120 116 ns ns i c =-4a, i b1 =-400ma i b2 =400ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient junction to case r th(j-amb) r th(j-case) 150 50 c/w c/w ZTX968 -40 2.0 1.0 0.0001 50 150 100 derating curve t -temperature (c) m a x p ower d iss ipa tion - (w a tt s ) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 4.0 3.0 -20 0 20 40 60 80 100 120 200 180 160 140 t 1 t p d=t 1 /t p case te mperatu r e ambien t t empe rat ure d.c. d=0.6 d=0.2 d=0.1 single pulse 0.001 0 d=0.05 3-334
pnp silicon planar medium power high current transistor issue 2 ? june 94 features * 4.5 amps continuous current * up to 20 amps peak current * very low saturation voltage * high gain * spice model available absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -15 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -6 v peak pulse current i cm -20 a continuous collector current i c -4.5 a practical power dissipation* p totp 1.58 w power dissipation at t amb =25c p tot 1.2 w operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -15 -28 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -12 -20 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -6 -8 v i e =-100 m a collector cut-off current i cbo -50 -1 na m a v cb =-12v v cb =-12v, t amb =100c emitter cut-off current i ebo -10 na v eb =-6v collector-emitter saturation voltage v ce(sat) -50 -100 -220 -100 -150 -300 mv mv mv i c =-500ma, i b =-5ma* i c =-2a, i b =-50ma* i c =-5a, i b =-200ma* base-emitter saturation voltage v be(sat) -930 -1050 mv i c =-5a, i b =-200ma* base-emitter turn-on voltage v be(on) -830 -1000 mv ic=-5a, v ce =-1v* e-line to92 compatible ZTX968 3-333 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. static forward current transfer ratio h fe 300 300 200 150 450 450 300 240 50 1000 i c =-10ma, v ce =-1v* i c =-500ma, v ce =-1v* i c =-5a, v ce =-1v* i c =-10a, v ce =-1v* i c =-20a, v ce =-1v* transition frequency f t 80 mhz i c =-100ma, v ce =-10v f=50mhz output capacitance c obo 161 pf v cb =-20v, f=1mhz switching times t on t off 120 116 ns ns i c =-4a, i b1 =-400ma i b2 =400ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient junction to case r th(j-amb) r th(j-case) 150 50 c/w c/w ZTX968 -40 2.0 1.0 0.0001 50 150 100 derating curve t -temperature (c) m a x p ower d iss ipa tion - (w a tt s ) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 4.0 3.0 -20 0 20 40 60 80 100 120 200 180 160 140 t 1 t p d=t 1 /t p case te mperatu r e ambien t t empe rat ure d.c. d=0.6 d=0.2 d=0.1 single pulse 0.001 0 d=0.05 3-334
1m 100 1m 100 1m 100 100 1m i c - collector current (a) v ce(sat) v i c 0 0.4 0.8 +25 c -55 c 800 400 +100 c 0 i c - collector current (a) h fe v i c +25 c +100 c 1.4 0.7 -55 c 0 i c - collector current (a) v be(on) v i c +25 c -55 c +100 c i c - collector current (a) v ce(sat) v i c +100 c +25 c 0 i c - collector current (a) v be(sat) v i c v ce - collector emitter voltage (v) safe operating area v ce =1v +25 c i c /i b =50 v ce =1v -55 c i c /i b =50 10m 100m 1 10 0.2 0.6 i c /i b =10 i c /i b =50 i c /i b =100 i c /i b =200 i c /i b =250 0.8 0.6 0.4 0.2 0 1m 10m 100m 1 10 100 10m 100m 1 10 200 600 10m 100m 1 10 0.4 0.8 1.2 1.6 10m 100m 1 10 0.1 100 110 100 0.1 1 10 typical characteristics i - colle ct o r current (a m ps) single pulse test at t amb =2 5c d.c. 1s 100ms 10ms 1.0ms 0.1ms ZTX968 ZTX968 zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161 622 4422 (sales), (44)161 622 4444 (general enquiries) fax: (44)161 622 4420 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 47 mall drive, unit 4 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny 11725 hing fong road, major countries world-wide germany usa kwai fong, hong kong ? ? zetex plc 1997 telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 internet: fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service.
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